Amandla aphezulu we-HJT yePhaneli yeSola yeSiqingatha yokuSika iModyuli yeSiqingatha seSeli yoku-1

Uyilo lwe-wafer oluxande luvumela ukufezekisa i-wafer enkulu kunye neyona ilungileyo. Oku akuthobanga iindleko zemveliso kuphela kodwa konyusa ixabiso lenkqubo, ibe yindlela ebalulekileyo yokuphucula ukusebenza kakuhle.

Imodyuli ye-wafer ye-G12R ixhotyiswe ngeteknoloji yeseli ye-HJT 3.0 ephucukileyo, iqhayisa ukusebenza kakuhle ukuya kuthi ga kwi-25.5%, imveliso yamandla ukuya kuthi ga kwi-640W, i-bificiality ye-85%, i-Tem. I-co-efficient -0.26% / ℃, ukuthotywa konyaka wokuqala ≤1%, iminyaka eyi-30 yokuthotywa komgca ≤12%.

Ukusebenzisa iteknoloji yokuguqula ukukhanya kwefilimu, imveliso ye-G12R iguqula ukukhanya kwe-UV kunye ne-wavelength engaphantsi kwe-380nm ibe ukukhanya okuluhlaza okwesibhakabhaka ngaphakathi koluhlu lwe-400-550nm. Oku kwandisa ngakumbi ukuxhathisa kwe-UV yemodyuli, ngaloo ndlela iphucula ukusebenza kakuhle koguqulo.

Izinga lokungena kwe-butyl adhesive (PIB) lingaphantsi kwe-0.3 g/m²•d, ngelixa irabha yesilicone iphakathi kwe-30-50 g/m²•d, ikhokelela kuphuculo oluphindwe kalishumi kuxhathiso lokungenwa komphunga wamanzi. I-PIB isetyenziselwa ukutywina imida yeemodyuli ze-bifacial, ukwahlula ngokufanelekileyo umswakama kunye nokuphucula umswakama kunye nokusebenza kokumelana nokushisa kweemodyuli ze-HJT.
